· Purpose : Graphene growing

· Pump : Rotary Oil Pump

· Base pressure : ~10(-3)Torr

· Max, Temp : about 1,100 degree C

· Heating method : Furnace

· Gas : CH4, H2, Ar

· System by touch screen

· Pressure control : Automatic pressure control

MoS2 TCVD system

· Purpose : MoS2 growing

· Pump : Rotary Oil pump

· Base pressure : ~10(-3) Torr

· Max, temp : 1zone 1,000 degree C

· Max, temp : 2zone 1,000 degree C

· Heating method : Furnace

· Gas : CH4, H2, Ar, H2S

· Automatic pressure control

· auto system

PE TCVD

· Purpose : MoS2 growing

· ICP type Plasma Power 1kw 13.56Mhz

· Pump : Rotary Oil pump

· Base pressure : ~10(-3) Torr

· Max, temp : 1,100 degree C

· Gas : CH4, H2, Ar

· Automatic Pressure control

Model : Thermal CVD50 Dual furnace CVD system 

 ● 2D material [Graphene, CNT, H-BN, MoS2, etc...]

 ● 자동 공정 압력 조절 시스템

 ● Program controller

    - 3type control : Full automatic control & Semi auto & Manual

    - 공정 recipe 설정(공정 재연성 확보)

    - 시스템 구성,  동작상황에 대해 시인성 좋은 GUI

    - Motor-controlled movable heater for fast heating and cooling

    - Temp. controller : PID control (2pattern 20segment, total 40 segment)