싸이앤텍
CVD
Total 4건 1 페이지
  • 4
    DISCRIPTION

    · Purpose : Graphene growing / Anealing

    · Pump : Rotary Oil pump

    · Base pressure : ~10(-3) Torr

    · Max, temp : about 1,100 degree C

    · Heating method : Furnace

    · Gas : Ar, Ch4, H2

    · Pressure control : Manual Throttle valuve

  • 3
    DISCRIPTION

    · Purpose : Graphene growing

    · Pump : Rotary Oil Pump

    · Base pressure : ~10(-3)Torr

    · Max, Temp : about 1,100 degree C

    · Heating method : Furnace

    · Gas : CH4, H2, Ar

    · System by touch screen

    · Pressure control : Automatic pressure control

  • 2
    DISCRIPTION

    MoS2 TCVD system

    · Purpose : MoS2 growing

    · Pump : Rotary Oil pump

    · Base pressure : ~10(-3) Torr

    · Max, temp : 1zone 1,000 degree C

    · Max, temp : 2zone 1,000 degree C

    · Heating method : Furnace

    · Gas : CH4, H2, Ar, H2S

    · Automatic pressure control

    · auto system


    PE TCVD

    · Purpose : MoS2 growing

    · ICP type Plasma Power 1kw 13.56Mhz

    · Pump : Rotary Oil pump

    · Base pressure : ~10(-3) Torr

    · Max, temp : 1,100 degree C

    · Gas : CH4, H2, Ar

    · Automatic Pressure control


  • 1
    DISCRIPTION

    Model : Thermal CVD50 Dual furnace CVD system 

     ● 2D material [Graphene, CNT, H-BN, MoS2, etc...]

     자동 공정 압력 조절 시스템

     ● Program controller

        - 3type control : Full automatic control & Semi auto & Manual

        - 공정 recipe 설정(공정 재연성 확보)

        - 시스템 구성,  동작상황에 대해 시인성 좋은 GUI

        - Motor-controlled movable heater for fast heating and cooling

        - Temp. controller : PID control (2pattern 20segment, total 40 segment)

게시물 검색
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